HGTG30N60B3D Pricing (USD) [13732PC Stock]
- 1 pcs$2.91303
- 10 pcs$2.63142
- 100 pcs$2.17860
- 500 pcs$1.89710
- 1,000 pcs$1.65231
- Nimewo Pati:
- HGTG30N60B3D
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 60A 208W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTG30N60B3D electronic components. HGTG30N60B3D can be shipped within 24 hours after order. If you have any demands for HGTG30N60B3D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG30N60B3D Atribi pwodwi yo
Nimewo Pati :
HGTG30N60B3D
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 60A 208W TO247
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
220A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 30A
Pouvwa - Max :
208W
Oblije chanje enèji :
550µJ (on), 680µJ (off)
Kalite Antre :
Standard
Gate chaje :
170nC
Td (on / off) @ 25 ° C :
36ns/137ns
Kondisyon egzamen an :
480V, 30A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
55ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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