Nimewo Pati :
SI7802DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 250V 1.24A 1212-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.24A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
435 mOhm @ 1.95A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8
Pake / Ka :
PowerPAK® 1212-8