Vishay Siliconix - SI7802DN-T1-GE3

KEY Part #: K6407823

[840PC Stock]


    Nimewo Pati:
    SI7802DN-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 250V 1.24A 1212-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI7802DN-T1-GE3 electronic components. SI7802DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7802DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7802DN-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI7802DN-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 250V 1.24A 1212-8
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.24A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
    RD sou (Max) @ Id, Vgs : 435 mOhm @ 1.95A, 10V
    Vgs (th) (Max) @ Id : 3.6V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.5W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PowerPAK® 1212-8
    Pake / Ka : PowerPAK® 1212-8

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