EPC - EPC2012

KEY Part #: K6406610

EPC2012 Pricing (USD) [1259PC Stock]

  • 1,000 pcs$0.56684

Nimewo Pati:
EPC2012
Manifakti:
EPC
Detaye deskripsyon:
GANFET TRANS 200V 3A BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in EPC EPC2012 electronic components. EPC2012 can be shipped within 24 hours after order. If you have any demands for EPC2012, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2012 Atribi pwodwi yo

Nimewo Pati : EPC2012
Manifakti : EPC
Deskripsyon : GANFET TRANS 200V 3A BUMPED DIE
Seri : eGaN®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1.8nC @ 5V
Vgs (Max) : +6V, -5V
Antre kapasite (Ciss) (Max) @ Vds : 145pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 125°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die
Pake / Ka : Die