Infineon Technologies - IPI60R099CPAAKSA1

KEY Part #: K6416769

IPI60R099CPAAKSA1 Pricing (USD) [18522PC Stock]

  • 1 pcs$2.22502
  • 500 pcs$2.04131

Nimewo Pati:
IPI60R099CPAAKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 31A TO-262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPI60R099CPAAKSA1 electronic components. IPI60R099CPAAKSA1 can be shipped within 24 hours after order. If you have any demands for IPI60R099CPAAKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI60R099CPAAKSA1 Atribi pwodwi yo

Nimewo Pati : IPI60R099CPAAKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 31A TO-262
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 105 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2800pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 255W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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