Nimewo Pati :
IPI60R099CPAAKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 31A TO-262
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
105 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 100V
Disipasyon Pouvwa (Max) :
255W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO262-3
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA