Infineon Technologies - IKW30N65NL5XKSA1

KEY Part #: K6424778

IKW30N65NL5XKSA1 Pricing (USD) [21992PC Stock]

  • 1 pcs$1.87397
  • 240 pcs$1.79014

Nimewo Pati:
IKW30N65NL5XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 650V 30A UFAST DIO TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IKW30N65NL5XKSA1 electronic components. IKW30N65NL5XKSA1 can be shipped within 24 hours after order. If you have any demands for IKW30N65NL5XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKW30N65NL5XKSA1 Atribi pwodwi yo

Nimewo Pati : IKW30N65NL5XKSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 650V 30A UFAST DIO TO247-3
Seri : TrenchStop™ 5
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 85A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 1.35V @ 15V, 30A
Pouvwa - Max : 227W
Oblije chanje enèji : 560µJ (on), 1.35mJ (off)
Kalite Antre : Standard
Gate chaje : 168nC
Td (on / off) @ 25 ° C : 59ns/283ns
Kondisyon egzamen an : 400V, 30A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) : 59ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PG-TO247-3