SQM50P03-07_GE3 Pricing (USD) [69584PC Stock]
- 1 pcs$0.99090
- 10 pcs$0.89641
- 100 pcs$0.72022
- 500 pcs$0.56017
- 1,000 pcs$0.46414
- Nimewo Pati:
- SQM50P03-07_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CHANNEL 30V 50A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQM50P03-07_GE3 electronic components. SQM50P03-07_GE3 can be shipped within 24 hours after order. If you have any demands for SQM50P03-07_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM50P03-07_GE3 Atribi pwodwi yo
Nimewo Pati :
SQM50P03-07_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CHANNEL 30V 50A TO263
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5380pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (D²Pak)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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