Microsemi Corporation - APT64GA90B2D30

KEY Part #: K6421738

APT64GA90B2D30 Pricing (USD) [6891PC Stock]

  • 1 pcs$5.98030
  • 10 pcs$5.43736
  • 25 pcs$5.02944
  • 100 pcs$4.62171
  • 250 pcs$4.21392
  • 500 pcs$3.94206

Nimewo Pati:
APT64GA90B2D30
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 900V 117A 500W TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - RF, Transistors - IGBTs - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT64GA90B2D30 Atribi pwodwi yo

Nimewo Pati : APT64GA90B2D30
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 900V 117A 500W TO-247
Seri : POWER MOS 8™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 900V
Kouran - Pèseptè (Ic) (Max) : 117A
Kouran - Pèseptè batman (Icm) : 193A
Vce (sou) (Max) @ Vge, Ic : 3.1V @ 15V, 38A
Pouvwa - Max : 500W
Oblije chanje enèji : 1192µJ (on), 1088µJ (off)
Kalite Antre : Standard
Gate chaje : 162nC
Td (on / off) @ 25 ° C : 18ns/131ns
Kondisyon egzamen an : 600V, 38A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : -