[995PC Stock]
- Nimewo Pati:
- 2SJ360(F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 60V 1A SC-62.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage 2SJ360(F) electronic components. 2SJ360(F) can be shipped within 24 hours after order. If you have any demands for 2SJ360(F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ360(F) Atribi pwodwi yo
Nimewo Pati :
2SJ360(F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 60V 1A SC-62
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
730 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
6.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
155pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PW-MINI
Pake / Ka :
TO-243AA
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