SSM6J212FE,LF Pricing (USD) [603363PC Stock]
- 1 pcs$0.06777
- 4,000 pcs$0.06743
- Nimewo Pati:
- SSM6J212FE,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 20V 4A ES6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - Objektif espesyal and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6J212FE,LF electronic components. SSM6J212FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6J212FE,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J212FE,LF Atribi pwodwi yo
Nimewo Pati :
SSM6J212FE,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 4A ES6
Seri :
U-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
40.7 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
14.1nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
970pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ES6
Pake / Ka :
SOT-563, SOT-666
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