Toshiba Semiconductor and Storage - TK8P60W,RVQ

KEY Part #: K6419111

TK8P60W,RVQ Pricing (USD) [91758PC Stock]

  • 1 pcs$0.45426
  • 2,000 pcs$0.45200

Nimewo Pati:
TK8P60W,RVQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 8A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK8P60W,RVQ electronic components. TK8P60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK8P60W,RVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK8P60W,RVQ Atribi pwodwi yo

Nimewo Pati : TK8P60W,RVQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 8A DPAK
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 400µA
Chaje Gate (Qg) (Max) @ Vgs : 18.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 570pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 80W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63