IRLHS6342TRPBF Pricing (USD) [394804PC Stock]
- 1 pcs$0.09369
- 4,000 pcs$0.08092
- Nimewo Pati:
- IRLHS6342TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 8.7A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLHS6342TRPBF electronic components. IRLHS6342TRPBF can be shipped within 24 hours after order. If you have any demands for IRLHS6342TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHS6342TRPBF Atribi pwodwi yo
Nimewo Pati :
IRLHS6342TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 8.7A PQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
15.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
1019pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-PQFN (2x2)
Pake / Ka :
6-PowerVDFN
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