[4193PC Stock]
- Nimewo Pati:
- SIA922EDJ-T4-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 30V SMD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIA922EDJ-T4-GE3 electronic components. SIA922EDJ-T4-GE3 can be shipped within 24 hours after order. If you have any demands for SIA922EDJ-T4-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA922EDJ-T4-GE3 Atribi pwodwi yo
Nimewo Pati :
SIA922EDJ-T4-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V SMD
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.4A (Ta), 4.5A (Tc)
RD sou (Max) @ Id, Vgs :
64 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.9W (Ta), 7.8W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SC-70-6 Dual
Pake Aparèy Founisè :
PowerPAK® SC-70-6 Dual
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