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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTTFS015P03P8ZTWG

ON Semiconductor - NTTFS015P03P8ZTWG

KEY Part #: K6421026

NTTFS015P03P8ZTWG Pricing (USD) [331459PC Stock]

  • 1 pcs$0.11159
Nimewo Pati:
NTTFS015P03P8ZTWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
PFET U8FL 30V 15MO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTTFS015P03P8ZTWG electronic components. NTTFS015P03P8ZTWG can be shipped within 24 hours after order. If you have any demands for NTTFS015P03P8ZTWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTTFS015P03P8ZTWG Atribi pwodwi yo

Nimewo Pati : NTTFS015P03P8ZTWG
Manifakti : ON Semiconductor
Deskripsyon : PFET U8FL 30V 15MO
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.4A (Ta), 47.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 9.3 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 62.3nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 2706pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.66W (Ta), 33.8W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-WDFN (3.3x3.3)
Pake / Ka : 8-PowerWDFN

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