[9539PC Stock]
- Nimewo Pati:
- IXGQ50N60B4D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 100A 300W TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - JFETs, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXGQ50N60B4D1 electronic components. IXGQ50N60B4D1 can be shipped within 24 hours after order. If you have any demands for IXGQ50N60B4D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGQ50N60B4D1 Atribi pwodwi yo
Nimewo Pati :
IXGQ50N60B4D1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 100A 300W TO3P
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
100A
Kouran - Pèseptè batman (Icm) :
230A
Vce (sou) (Max) @ Vge, Ic :
1.8V @ 15V, 36A
Pouvwa - Max :
300W
Oblije chanje enèji :
930µJ (on), 1mJ (off)
Kalite Antre :
Standard
Gate chaje :
110nC
Td (on / off) @ 25 ° C :
37ns/330ns
Kondisyon egzamen an :
400V, 36A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
25ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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