Nimewo Pati :
HGT1S3N60A4DS9A
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 17A 70W D2PAK
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
17A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 3A
Oblije chanje enèji :
37µJ (on), 25µJ (off)
Td (on / off) @ 25 ° C :
6ns/73ns
Kondisyon egzamen an :
390V, 3A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) :
29ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB