ON Semiconductor - HGT1S3N60A4DS9A

KEY Part #: K6424089

[9428PC Stock]


    Nimewo Pati:
    HGT1S3N60A4DS9A
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    IGBT 600V 17A 70W D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - RF, Tiristors - TRIACs and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor HGT1S3N60A4DS9A electronic components. HGT1S3N60A4DS9A can be shipped within 24 hours after order. If you have any demands for HGT1S3N60A4DS9A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGT1S3N60A4DS9A Atribi pwodwi yo

    Nimewo Pati : HGT1S3N60A4DS9A
    Manifakti : ON Semiconductor
    Deskripsyon : IGBT 600V 17A 70W D2PAK
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 17A
    Kouran - Pèseptè batman (Icm) : 40A
    Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 3A
    Pouvwa - Max : 70W
    Oblije chanje enèji : 37µJ (on), 25µJ (off)
    Kalite Antre : Standard
    Gate chaje : 21nC
    Td (on / off) @ 25 ° C : 6ns/73ns
    Kondisyon egzamen an : 390V, 3A, 50 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 29ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : TO-263AB