HGT1S20N60C3S9A Pricing (USD) [34819PC Stock]
- 1 pcs$1.18362
- 800 pcs$1.07957
- Nimewo Pati:
- HGT1S20N60C3S9A
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 45A 164W TO263AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGT1S20N60C3S9A electronic components. HGT1S20N60C3S9A can be shipped within 24 hours after order. If you have any demands for HGT1S20N60C3S9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S20N60C3S9A Atribi pwodwi yo
Nimewo Pati :
HGT1S20N60C3S9A
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 45A 164W TO263AB
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
45A
Kouran - Pèseptè batman (Icm) :
300A
Vce (sou) (Max) @ Vge, Ic :
1.8V @ 15V, 20A
Pouvwa - Max :
164W
Oblije chanje enèji :
295µJ (on), 500µJ (off)
Kalite Antre :
Standard
Gate chaje :
91nC
Td (on / off) @ 25 ° C :
28ns/151ns
Kondisyon egzamen an :
480V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
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