DMN2005K-7 Pricing (USD) [500944PC Stock]
- 1 pcs$0.07384
- 3,000 pcs$0.06608
- Nimewo Pati:
- DMN2005K-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 300MA SOT23-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2005K-7 electronic components. DMN2005K-7 can be shipped within 24 hours after order. If you have any demands for DMN2005K-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2005K-7 Atribi pwodwi yo
Nimewo Pati :
DMN2005K-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 300MA SOT23-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 2.7V
RD sou (Max) @ Id, Vgs :
1.7 Ohm @ 200mA, 2.7V
Vgs (th) (Max) @ Id :
900mV @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
350mW (Ta)
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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