Nexperia USA Inc. - PSMN1R2-30YLC,115

KEY Part #: K6417128

PSMN1R2-30YLC,115 Pricing (USD) [149156PC Stock]

  • 1 pcs$0.24798
  • 1,500 pcs$0.18272

Nimewo Pati:
PSMN1R2-30YLC,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 30V 100A LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN1R2-30YLC,115 electronic components. PSMN1R2-30YLC,115 can be shipped within 24 hours after order. If you have any demands for PSMN1R2-30YLC,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R2-30YLC,115 Atribi pwodwi yo

Nimewo Pati : PSMN1R2-30YLC,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 100A LFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.25 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 1.95V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5093pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 215W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669