IGD01N120H2BUMA1 Pricing (USD) [151151PC Stock]
- 1 pcs$0.24470
- 2,500 pcs$0.21075
- Nimewo Pati:
- IGD01N120H2BUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 3.2A 28W TO252-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Diodes - Zener - Arrays, Tiristors - SCR, Diodes - Rèkteur - Single and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IGD01N120H2BUMA1 electronic components. IGD01N120H2BUMA1 can be shipped within 24 hours after order. If you have any demands for IGD01N120H2BUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGD01N120H2BUMA1 Atribi pwodwi yo
Nimewo Pati :
IGD01N120H2BUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 3.2A 28W TO252-3
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
3.2A
Kouran - Pèseptè batman (Icm) :
3.5A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Pouvwa - Max :
28W
Oblije chanje enèji :
140µJ
Kalite Antre :
Standard
Gate chaje :
8.6nC
Td (on / off) @ 25 ° C :
13ns/370ns
Kondisyon egzamen an :
800V, 1A, 241 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
PG-TO252-3
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