TSM033NA03CR RLG Pricing (USD) [260330PC Stock]
- 1 pcs$0.14208
- Nimewo Pati:
- TSM033NA03CR RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 30V 129A 8PDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM033NA03CR RLG electronic components. TSM033NA03CR RLG can be shipped within 24 hours after order. If you have any demands for TSM033NA03CR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM033NA03CR RLG Atribi pwodwi yo
Nimewo Pati :
TSM033NA03CR RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 30V 129A 8PDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
129A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1850pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)
Pake / Ka :
8-PowerTDFN
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