Infineon Technologies - BSS139L6906HTSA1

KEY Part #: K6407316

[1015PC Stock]


    Nimewo Pati:
    BSS139L6906HTSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 250V 100MA SOT-23.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSS139L6906HTSA1 electronic components. BSS139L6906HTSA1 can be shipped within 24 hours after order. If you have any demands for BSS139L6906HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSS139L6906HTSA1 Atribi pwodwi yo

    Nimewo Pati : BSS139L6906HTSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 250V 100MA SOT-23
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 0V, 10V
    RD sou (Max) @ Id, Vgs : 14 Ohm @ 0.1mA, 10V
    Vgs (th) (Max) @ Id : 1V @ 56µA
    Chaje Gate (Qg) (Max) @ Vgs : 3.5nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 76pF @ 25V
    Karakteristik FET : Depletion Mode
    Disipasyon Pouvwa (Max) : 360mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-3
    Pake / Ka : TO-236-3, SC-59, SOT-23-3

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