IRFBC30PBF Pricing (USD) [54057PC Stock]
- 1 pcs$0.63551
- 10 pcs$0.56318
- 100 pcs$0.44507
- 500 pcs$0.32651
- 1,000 pcs$0.25777
- Nimewo Pati:
- IRFBC30PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 600V 3.6A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFBC30PBF electronic components. IRFBC30PBF can be shipped within 24 hours after order. If you have any demands for IRFBC30PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBC30PBF Atribi pwodwi yo
Nimewo Pati :
IRFBC30PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 3.6A TO-220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
660pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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