Nexperia USA Inc. - PSMN3R4-30BL,118

KEY Part #: K6420082

PSMN3R4-30BL,118 Pricing (USD) [158072PC Stock]

  • 1 pcs$0.23399
  • 800 pcs$0.23088

Nimewo Pati:
PSMN3R4-30BL,118
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 30V 100A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN3R4-30BL,118 electronic components. PSMN3R4-30BL,118 can be shipped within 24 hours after order. If you have any demands for PSMN3R4-30BL,118, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN3R4-30BL,118 Atribi pwodwi yo

Nimewo Pati : PSMN3R4-30BL,118
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 100A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3907pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 114W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB