RJH60D5BDPQ-E0#T2 Pricing (USD) [17778PC Stock]
- 1 pcs$2.31808
- Nimewo Pati:
- RJH60D5BDPQ-E0#T2
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- IGBT 600V 75A 200W TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tiristors - SCR, Tiristors - TRIACs, Diodes - RF, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJH60D5BDPQ-E0#T2 electronic components. RJH60D5BDPQ-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJH60D5BDPQ-E0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJH60D5BDPQ-E0#T2 Atribi pwodwi yo
Nimewo Pati :
RJH60D5BDPQ-E0#T2
Manifakti :
Renesas Electronics America
Deskripsyon :
IGBT 600V 75A 200W TO-247
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
75A
Kouran - Pèseptè batman (Icm) :
-
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 37A
Pouvwa - Max :
200W
Oblije chanje enèji :
400µJ (on), 810µJ (off)
Kalite Antre :
Standard
Gate chaje :
78nC
Td (on / off) @ 25 ° C :
50ns/130ns
Kondisyon egzamen an :
300V, 37A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
25ns
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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