Infineon Technologies - FZ2400R12HE4B9HOSA2

KEY Part #: K6533438

FZ2400R12HE4B9HOSA2 Pricing (USD) [89PC Stock]

  • 1 pcs$396.58661

Nimewo Pati:
FZ2400R12HE4B9HOSA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MODULE IGBT IHMB190-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Zener - Single, Transistors - Objektif espesyal and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies FZ2400R12HE4B9HOSA2 electronic components. FZ2400R12HE4B9HOSA2 can be shipped within 24 hours after order. If you have any demands for FZ2400R12HE4B9HOSA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FZ2400R12HE4B9HOSA2 Atribi pwodwi yo

Nimewo Pati : FZ2400R12HE4B9HOSA2
Manifakti : Infineon Technologies
Deskripsyon : MODULE IGBT IHMB190-2
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single Switch
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 3560A
Pouvwa - Max : 13500W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 2400A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 150nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module