Nimewo Pati :
DMHC10H170SFJ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N/2P-CH 100V DFN5045-12
FET Kalite :
2 N and 2 P-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A, 2.3A
RD sou (Max) @ Id, Vgs :
160 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1167pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
12-VDFN Exposed Pad
Pake Aparèy Founisè :
V-DFN5045-12