SI6975DQ-T1-E3 Pricing (USD) [72387PC Stock]
- 1 pcs$0.54287
- 3,000 pcs$0.54016
- Nimewo Pati:
- SI6975DQ-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2P-CH 12V 4.3A 8TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI6975DQ-T1-E3 electronic components. SI6975DQ-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI6975DQ-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6975DQ-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI6975DQ-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 12V 4.3A 8TSSOP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.3A
RD sou (Max) @ Id, Vgs :
27 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 5mA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
830mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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