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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EFC4612R-TR

ON Semiconductor - EFC4612R-TR

KEY Part #: K6402528

EFC4612R-TR Pricing (USD) [2673PC Stock]

  • 5,000 pcs$0.09147
Nimewo Pati:
EFC4612R-TR
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 24V 6A EFCP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor EFC4612R-TR electronic components. EFC4612R-TR can be shipped within 24 hours after order. If you have any demands for EFC4612R-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EFC4612R-TR Atribi pwodwi yo

Nimewo Pati : EFC4612R-TR
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 24V 6A EFCP
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 24V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 45 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.6W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : EFCP1313-4CC-037
Pake / Ka : 4-XFBGA

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