IXTA120P065T Pricing (USD) [23749PC Stock]
- 1 pcs$2.00556
- 50 pcs$1.99558
- Nimewo Pati:
- IXTA120P065T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 65V 120A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - TRIACs, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA120P065T electronic components. IXTA120P065T can be shipped within 24 hours after order. If you have any demands for IXTA120P065T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA120P065T Atribi pwodwi yo
Nimewo Pati :
IXTA120P065T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 65V 120A TO-263
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
65V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
185nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
13200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
298W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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