IXTY10P15T Pricing (USD) [42997PC Stock]
- 1 pcs$1.00534
- 70 pcs$1.00033
- Nimewo Pati:
- IXTY10P15T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 150V 10A TO-252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTY10P15T electronic components. IXTY10P15T can be shipped within 24 hours after order. If you have any demands for IXTY10P15T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY10P15T Atribi pwodwi yo
Nimewo Pati :
IXTY10P15T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 150V 10A TO-252
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
350 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
2210pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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