[3792PC Stock]
- Nimewo Pati:
- ZXMN6A11DN8TC
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 2.5A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Tiristors - SCR and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN6A11DN8TC electronic components. ZXMN6A11DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN6A11DN8TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN6A11DN8TC Atribi pwodwi yo
Nimewo Pati :
ZXMN6A11DN8TC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 60V 2.5A 8SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
5.7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 40V
Pouvwa - Max :
1.8W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP
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