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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. ZXMN6A11DN8TC

Diodes Incorporated - ZXMN6A11DN8TC

KEY Part #: K6524557

[3792PC Stock]

    Nimewo Pati:
    ZXMN6A11DN8TC
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET 2N-CH 60V 2.5A 8SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXMN6A11DN8TC electronic components. ZXMN6A11DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN6A11DN8TC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN6A11DN8TC Atribi pwodwi yo

    Nimewo Pati : ZXMN6A11DN8TC
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET 2N-CH 60V 2.5A 8SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A
    RD sou (Max) @ Id, Vgs : 120 mOhm @ 2.5A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
    Chaje Gate (Qg) (Max) @ Vgs : 5.7nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 330pF @ 40V
    Pouvwa - Max : 1.8W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOP

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