Infineon Technologies - BSP321PL6327HTSA1

KEY Part #: K6407328

[1011PC Stock]


    Nimewo Pati:
    BSP321PL6327HTSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 100V 0.98A SOT-223.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Diodes - Rèkteur - Single and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSP321PL6327HTSA1 electronic components. BSP321PL6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSP321PL6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSP321PL6327HTSA1 Atribi pwodwi yo

    Nimewo Pati : BSP321PL6327HTSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 100V 0.98A SOT-223
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 980mA (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 900 mOhm @ 980mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 380µA
    Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 319pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.8W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-SOT223-4
    Pake / Ka : TO-261-4, TO-261AA

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