[12470PC Stock]
- Nimewo Pati:
- 2N7002E,215
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 0.385A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. 2N7002E,215 electronic components. 2N7002E,215 can be shipped within 24 hours after order. If you have any demands for 2N7002E,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7002E,215 Atribi pwodwi yo
Nimewo Pati :
2N7002E,215
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V 0.385A SOT23
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
385mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.69nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
50pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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