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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. BSS123W

ON Semiconductor - BSS123W

KEY Part #: K6418078

BSS123W Pricing (USD) [926963PC Stock]

  • 1 pcs$0.03990
  • 3,000 pcs$0.03892
Nimewo Pati:
BSS123W
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 0.17A SOT-323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor BSS123W electronic components. BSS123W can be shipped within 24 hours after order. If you have any demands for BSS123W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS123W Atribi pwodwi yo

Nimewo Pati : BSS123W
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 0.17A SOT-323
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6 Ohm @ 170mA, 10V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 71pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 200mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-70 (SOT323)
Pake / Ka : SC-70, SOT-323

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