DMG4N65CTI Pricing (USD) [76194PC Stock]
- 1 pcs$0.41392
- 50 pcs$0.30208
- 100 pcs$0.26313
- 500 pcs$0.19490
- 1,000 pcs$0.15592
- Nimewo Pati:
- DMG4N65CTI
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 650V 4A ITO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG4N65CTI electronic components. DMG4N65CTI can be shipped within 24 hours after order. If you have any demands for DMG4N65CTI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N65CTI Atribi pwodwi yo
Nimewo Pati :
DMG4N65CTI
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 650V 4A ITO-220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.5nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
8.35W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ITO-220AB
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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