SPB18P06PGATMA1 Pricing (USD) [161296PC Stock]
- 1 pcs$0.22931
- Nimewo Pati:
- SPB18P06PGATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 60V 18.7A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SPB18P06PGATMA1 electronic components. SPB18P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB18P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB18P06PGATMA1 Atribi pwodwi yo
Nimewo Pati :
SPB18P06PGATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 60V 18.7A TO-263
Seri :
SIPMOS®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
130 mOhm @ 13.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
860pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
81.1W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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