Nexperia USA Inc. - PMV120ENEAR

KEY Part #: K6421472

PMV120ENEAR Pricing (USD) [595904PC Stock]

  • 1 pcs$0.06207
  • 3,000 pcs$0.05456

Nimewo Pati:
PMV120ENEAR
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 60V TO-236AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - JFETs, Transistors - Objektif espesyal, Tiristors - SCR and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMV120ENEAR Atribi pwodwi yo

Nimewo Pati : PMV120ENEAR
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 60V TO-236AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 123 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7.4nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 275pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 513mW (Ta), 6.4W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB
Pake / Ka : TO-236-3, SC-59, SOT-23-3