STD10N60M2 Pricing (USD) [112621PC Stock]
- 1 pcs$0.32842
- 2,500 pcs$0.29235
- Nimewo Pati:
- STD10N60M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Diodes - RF and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STD10N60M2 electronic components. STD10N60M2 can be shipped within 24 hours after order. If you have any demands for STD10N60M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD10N60M2 Atribi pwodwi yo
Nimewo Pati :
STD10N60M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V DPAK
Seri :
MDmesh™ II Plus
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
85W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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