TPW4R50ANH,L1Q Pricing (USD) [122345PC Stock]
- 1 pcs$0.31034
- 5,000 pcs$0.30880
- Nimewo Pati:
- TPW4R50ANH,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 100V 92A 8DSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPW4R50ANH,L1Q electronic components. TPW4R50ANH,L1Q can be shipped within 24 hours after order. If you have any demands for TPW4R50ANH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW4R50ANH,L1Q Atribi pwodwi yo
Nimewo Pati :
TPW4R50ANH,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 100V 92A 8DSOP
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
92A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5200pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800mW (Ta), 142W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-DSOP Advance
Pake / Ka :
8-PowerVDFN
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