IXFX420N10T Pricing (USD) [7973PC Stock]
- 1 pcs$5.71427
- 60 pcs$5.68584
- Nimewo Pati:
- IXFX420N10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 420A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Modil pouvwa chofè, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX420N10T electronic components. IXFX420N10T can be shipped within 24 hours after order. If you have any demands for IXFX420N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX420N10T Atribi pwodwi yo
Nimewo Pati :
IXFX420N10T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 420A PLUS247
Seri :
GigaMOS™ HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
420A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.6 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
670nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
47000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1670W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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