Vishay Siliconix - SQ3410EV-T1_GE3

KEY Part #: K6420980

SQ3410EV-T1_GE3 Pricing (USD) [310319PC Stock]

  • 1 pcs$0.11919
  • 3,000 pcs$0.10093

Nimewo Pati:
SQ3410EV-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 8A TSOP-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQ3410EV-T1_GE3 electronic components. SQ3410EV-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ3410EV-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ3410EV-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQ3410EV-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 8A TSOP-6
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 17.5 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1005pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SOT-23-6 Thin, TSOT-23-6