STMicroelectronics - STGW25S120DF3

KEY Part #: K6422262

STGW25S120DF3 Pricing (USD) [9660PC Stock]

  • 1 pcs$3.96630
  • 10 pcs$3.58157
  • 100 pcs$2.96521
  • 500 pcs$2.58206

Nimewo Pati:
STGW25S120DF3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 1200V 25A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW25S120DF3 electronic components. STGW25S120DF3 can be shipped within 24 hours after order. If you have any demands for STGW25S120DF3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW25S120DF3 Atribi pwodwi yo

Nimewo Pati : STGW25S120DF3
Manifakti : STMicroelectronics
Deskripsyon : IGBT 1200V 25A TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Pouvwa - Max : 375W
Oblije chanje enèji : 830µJ (on), 2.37mJ (off)
Kalite Antre : Standard
Gate chaje : 80nC
Td (on / off) @ 25 ° C : 31ns/147ns
Kondisyon egzamen an : 600V, 25A, 15 Ohm, 15V
Ranvèse Tan Reverse (trr) : 265ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3

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