STMicroelectronics - STGWA15H120DF2

KEY Part #: K6422970

STGWA15H120DF2 Pricing (USD) [12419PC Stock]

  • 1 pcs$3.08490
  • 10 pcs$2.78566
  • 100 pcs$2.30627
  • 500 pcs$2.00827
  • 1,000 pcs$1.74914

Nimewo Pati:
STGWA15H120DF2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT HB 1200V 15A HS TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGWA15H120DF2 Atribi pwodwi yo

Nimewo Pati : STGWA15H120DF2
Manifakti : STMicroelectronics
Deskripsyon : IGBT HB 1200V 15A HS TO247-3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 30A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2.6V @ 15V, 15A
Pouvwa - Max : 259W
Oblije chanje enèji : 380µJ (on), 370µJ (off)
Kalite Antre : Standard
Gate chaje : 67nC
Td (on / off) @ 25 ° C : 23ns/111ns
Kondisyon egzamen an : 600V, 15A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 231ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3