STMicroelectronics - STD7NM80-1

KEY Part #: K6418475

STD7NM80-1 Pricing (USD) [64847PC Stock]

  • 1 pcs$0.60298
  • 3,000 pcs$0.53458

Nimewo Pati:
STD7NM80-1
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 800V 6.5A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Bridge rèktifikateur and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in STMicroelectronics STD7NM80-1 electronic components. STD7NM80-1 can be shipped within 24 hours after order. If you have any demands for STD7NM80-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD7NM80-1 Atribi pwodwi yo

Nimewo Pati : STD7NM80-1
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 800V 6.5A IPAK
Seri : MDmesh™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.05 Ohm @ 3.25A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 620pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 90W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I-PAK
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA