DMG4712SSS-13 Pricing (USD) [244308PC Stock]
- 1 pcs$0.15424
- 10 pcs$0.12656
- 100 pcs$0.08602
- 500 pcs$0.06453
- 1,000 pcs$0.04839
- Nimewo Pati:
- DMG4712SSS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V 11.2A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Zener - Single, Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG4712SSS-13 electronic components. DMG4712SSS-13 can be shipped within 24 hours after order. If you have any demands for DMG4712SSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4712SSS-13 Atribi pwodwi yo
Nimewo Pati :
DMG4712SSS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 11.2A 8SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 11.2A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45.7nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
2296pF @ 15V
Karakteristik FET :
Schottky Diode (Body)
Disipasyon Pouvwa (Max) :
1.55W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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