SSM6K217FE,LF Pricing (USD) [944660PC Stock]
- 1 pcs$0.17402
- 10 pcs$0.13724
- 100 pcs$0.09409
- 500 pcs$0.06453
- 1,000 pcs$0.04839
- Nimewo Pati:
- SSM6K217FE,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 40V 1.8A ES6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6K217FE,LF electronic components. SSM6K217FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6K217FE,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6K217FE,LF Atribi pwodwi yo
Nimewo Pati :
SSM6K217FE,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 40V 1.8A ES6
Seri :
U-MOSVII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 8V
RD sou (Max) @ Id, Vgs :
195 mOhm @ 1A, 8V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
1.1nC @ 4.2V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
130pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ES6
Pake / Ka :
SOT-563, SOT-666
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