ON Semiconductor - HGTG40N60B3

KEY Part #: K6422846

HGTG40N60B3 Pricing (USD) [7639PC Stock]

  • 1 pcs$5.39417
  • 450 pcs$3.98297

Nimewo Pati:
HGTG40N60B3
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 70A 290W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGTG40N60B3 electronic components. HGTG40N60B3 can be shipped within 24 hours after order. If you have any demands for HGTG40N60B3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGTG40N60B3 Atribi pwodwi yo

Nimewo Pati : HGTG40N60B3
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 70A 290W TO247
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 330A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 40A
Pouvwa - Max : 290W
Oblije chanje enèji : 1.05mJ (on), 800µJ (off)
Kalite Antre : Standard
Gate chaje : 250nC
Td (on / off) @ 25 ° C : 47ns/170ns
Kondisyon egzamen an : 480V, 40A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247