IXGQ35N120BD1 Pricing (USD) [12034PC Stock]
- 1 pcs$3.60553
- 30 pcs$3.58759
- Nimewo Pati:
- IXGQ35N120BD1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 75A 400W TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXGQ35N120BD1 electronic components. IXGQ35N120BD1 can be shipped within 24 hours after order. If you have any demands for IXGQ35N120BD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGQ35N120BD1 Atribi pwodwi yo
Nimewo Pati :
IXGQ35N120BD1
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 75A 400W TO3P
Seri :
-
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
75A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
3.3V @ 15V, 35A
Pouvwa - Max :
400W
Oblije chanje enèji :
900µJ (on), 3.8mJ (off)
Kalite Antre :
Standard
Gate chaje :
140nC
Td (on / off) @ 25 ° C :
40ns/270ns
Kondisyon egzamen an :
960V, 35A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
40ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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