ISL9R18120G2 Pricing (USD) [26720PC Stock]
- 1 pcs$1.58211
- 10 pcs$1.42082
- 100 pcs$1.10458
- 500 pcs$0.94031
- 1,000 pcs$0.79303
- Nimewo Pati:
- ISL9R18120G2
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- DIODE GEN PURP 1.2KV 18A TO247. Diodes - General Purpose, Power, Switching 18A 1200V Stealt
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Tiristors - SCR and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor ISL9R18120G2 electronic components. ISL9R18120G2 can be shipped within 24 hours after order. If you have any demands for ISL9R18120G2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ISL9R18120G2 Atribi pwodwi yo
Nimewo Pati :
ISL9R18120G2
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 1.2KV 18A TO247
Seri :
Stealth™
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
18A
Voltage - Forward (Vf) (Max) @ Si :
3.3V @ 18A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
70ns
Kouran - Fèy Reverse @ Vr :
100µA @ 1200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-2
Pake Aparèy Founisè :
TO-247-2
Operating Tanperati - Junction :
-55°C ~ 150°C
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