Infineon Technologies - BSC0993NDATMA1

KEY Part #: K6525262

BSC0993NDATMA1 Pricing (USD) [156830PC Stock]

  • 1 pcs$0.23584
  • 5,000 pcs$0.21640

Nimewo Pati:
BSC0993NDATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 8TISON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC0993NDATMA1 Atribi pwodwi yo

Nimewo Pati : BSC0993NDATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 8TISON
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : 2 N-Channel
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : -
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Ta)
RD sou (Max) @ Id, Vgs : 5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : PG-TISON-8